STMicroelectronics Transistor (BJT) - Discrete MJE3055T TO 220AB No. of channels 1 NPN

Collector current: 10 A; Collector cutoff current: 700 µA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 8 V; DC current gain (hFE): 20; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): STM; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 75 W; Transit frequency f(T): 2 MHz; Type (transistors): NPN

Price: 0.92 from Conrad Electronic